vishay bzg03c... document number 85593 rev. 1.7, 28-jan-04 vishay semiconductors www.vishay.com 1 15811 silicon zener diodes features ? glass passivated junction high reliability voltage range 10 v to 270 v fits onto 5 mm smd footpads wave and reflow solderable applications voltage stabilization mechanical data case: do214ac weight: 76 mg packaging codes/options: tr / 1.5k 7 " reel tr3 / 6k 13 " reel 6k/box absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol value unit power dissipation r thja < 25 k/w, t amb = 100 c p diss 3w r thja < 100 k/w, t amb = 50 c p diss 1.25 w non repetitive peak surge power dissipation t p = 100 s sq.pulse, t j = 25 c prior to surge p zsm 600 w junction temperature t j 150 c storage temperature range t stg - 65 to + 150 c parameter test condition symbol value unit junction lead r thjl 25 k/w junction ambient mounted on epoxy-glass hard tissue, fig. 1a r thja 150 k/w mounted on epoxy-glass hard tissue, fig. 1b r thja 125 k/w mounted on al-oxid-ceramic (al 2 o 3 ), fig. 1b r thja 100 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 0.5 a v f 1.2 v
www.vishay.com 2 document number 85593 rev. 1.7, 28-jan-04 vishay bzg03c... vishay semiconductors electrical characteristics bzg03c... partnumber zener voltage range dynamic resistance test current temperature coefficient of zener voltage reverse leakage current v z @ i zt r zj and tk vz @ i zt i zt tk vz @ i zt i r @ v r v ? ma %/k a v min typ max typ max min max max BZG03C10 9.4 10 10.6 2 4 50 0.05 0.09 10 7.5 bzg03c11 10.4 11 11.6 4 7 50 0.05 0.1 4 8.2 bzg03c12 11.4 12 12.7 4 7 50 0.05 0.1 3 9.1 bzg03c13 12.4 13 14.1 5 10 50 0.05 0.1 2 10 bzg03c15 13.8 15 15.6 5 10 50 0.05 0.1 1 11 bzg03c16 15.3 16 17.1 6 15 25 0.06 0.11 1 12 bzg03c18 16.8 18 19.1 6 15 25 0.06 0.11 1 13 bzg03c20 18.8 20 21.2 6 15 25 0.06 0.11 1 15 bzg03c22 20.8 22 23.3 6 15 25 0.06 0.11 1 16 bzg03c24 22.8 24 25.6 7 15 25 0.06 0.11 1 18 bzg03c27 25.1 27 28.9 7 15 25 0.06 0.11 1 20 bzg03c30 28 30 32 8 15 25 0.06 0.11 1 22 bzg03c33 31 33 35 8 15 25 0.06 0.11 1 24 bzg03c36 34 36 38 21 40 10 0.06 0.11 1 27 bzg03c39 37 39 41 21 40 10 0.06 0.11 1 30 bzg03c43 40 43 46 24 45 10 0.07 0.12 1 33 bzg03c47 44 47 50 24 45 10 0.07 0.12 1 36 bzg03c51 48 51 54 25 60 10 0.07 0.12 1 39 bzg03c56 52 56 60 25 60 10 0.07 0.12 1 43 bzg03c62 58 62 66 25 80 10 0.08 0.13 1 47 bzg03c68 64 68 72 25 80 10 0.08 0.13 1 51 bzg03c75 70 75 79 30 100 10 0.08 0.13 1 56 bzg03c82 77 82 87 30 100 10 0.08 0.13 1 62 bzg03c91 85 91 96 60 200 5 0.09 0.13 1 68 BZG03C100 94 100 106 60 200 5 0.09 0.13 1 75 bzg03c110 104 110 116 80 250 5 0.09 0.13 1 82 bzg03c120 114 120 127 80 250 5 0.09 0.13 1 91 bzg03c130 124 130 141 110 300 5 0.09 0.13 1 100 bzg03c150 138 150 156 130 300 5 0.09 0.13 1 110 bzg03c160 158 160 171 150 350 5 0.09 0.13 1 120 bzg03c180 168 180 191 180 400 5 0.09 0.13 1 130 bzg03c200 188 200 212 200 500 5 0.09 0.13 1 150 bzg03c220 208 220 233 350 750 2 0.09 0.13 1 160 bzg03c240 228 240 256 400 850 2 0.09 0.13 1 180 bzg03c270 251 270 289 450 1000 2 0.09 0.13 1 200
vishay bzg03c... document number 85593 rev. 1.7, 28-jan-04 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. boards for r thja definition (copper overlay 35 ) figure 2. total power dissipation vs. ambient temperature 2.0 1.5 25.0 25.0 2.0 10.0 1.0 5.0 94 9313 a) b) 0 0 1 2 3 4 94 9580 40 80 120 160 p ?total powerdissipation(w ) tot t amb ? ambient temperature(c ) 200 r thja =100k/w r thja =25k/w figure 3. forward current vs. forward voltage figure 4. non repetitive surge power dissipation vs. pulse length 0 0.5 1.0 1.5 0 0.5 1.0 1.5 2.0 3.0 2.0 94 9581 i ? forward current (a ) f v f ? forward voltag e(v) 2.5 0.01 0.1 1 10 10 100 1000 10000 p ? non-repetitive surge power zsm t p ? pulse length ( ms ) 100 94 9582 dissipation (w) 1 10 100 1000 z ?thermal resistance for pulse cond.(k/ w thp t p ? pulse lengt h(s) 94 9583 10 ?5 10 ?4 10 ?3 10 ?2 10 ?1 10 0 10 1 10 2 t p /t=0.5 t p /t=0.2 t p /t=0.1 t p /t=0.05 t p /t=0.02 t p /t=0.01 figure 5. thermal response
www.vishay.com 4 document number 85593 rev. 1.7, 28-jan-04 vishay bzg03c... vishay semiconductors package dimensions in mm (inches) 14275 5.3 (0.207) 4.4 (0.172) 3.0 (0.117) 2.15 (0.084) 0.1 (0.004) 0. 2 (0.008) 2.6 (0.101) 1.5 (0.059) 2.4 2.2 2.6 7.0 2.4 mounting pad layout
vishay bzg03c... document number 85593 rev. 1.7, 28-jan-04 vishay semiconductors www.vishay.com 5 ozone depleting substa nces policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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